solid state devices, inc. SFF75N06M sff75n06z features: data sheet #: f00311b maximum ratings ? advanced high-cell density withstands high energy ? very low conduction and switching losses ? fast recovery drain-to-source diode with soft recovery ? rugged construction with poly silicon gate ? ultra low rds (on) and high transconductance ? excellent high temperature stability ? very fast switching speed ? fast recovery and superior dv/dt performance ? increased reverse energy capability ? low input and transfer capacitance for easy paralleling ? hermetically sealed package ? tx, txv and space level screening available 75 amp 60 volts 15m w w w w w n-channel power mosfet designer's data sheet note: all specifications are subject to change without notification. scds for these devices should be reviewed by ssdi prior to release. v dg 60 volts drain to gate voltage (rgs = 1.0 m w) w) w) w) w) i d 56 1/ continuous drain current drain to source voltage v ds 60 amps volts thermal resistance, junction to case r q q q q q jc t op & t stg -55 to +150 operating and storage temperature o c o c/w 1 characteristic symbol value unit watts total device dissipation p d 125 95 @ tc = 25 o c @ tc = 55 o c to-254z (z) to-254 (m) 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 case outline: to-254z (sufix z) case outline: to-254 (sufix m) available with glass or ceramic seals. contact facory for details. gate to source voltage v gs + 20 volts pin out: pin 1: drain pin 2: source pin 3: gate pin out: pin 1: drain pin 2: source pin 3: gate
solid state devices, inc. electrical characteristics @ t j =25 o c (unless otherwise specified) v drain to source breakdown voltage (vgs =0 v, id = 250 m a) - bv dss - rating symbol min typ max unit 60 m w w w w w drain to source on state resistance (vgs = 10 v,tc = 150 o c) r ds(on) - - - v gate threshold voltage (vds = vgs, id = 250 m a) - v gs(th) 4.0 2 smho forward transconductance (vds > id(on) x rds (on) max, ids=60% rated id) 35 gf s - 15 m m m m m a zero gate voltage drain current (v ds = 80% rated voltage, v gs = 0v) (v ds = 80% rated v ds , v gs = 0v, t a = 125 o c) - - i dss - - gate to source leakage forward gate to source leakage reverse - - i gss +100 -100 - - at rated vgs total gate charge gate to source charge gate to drain charge vgs = 10 v 50% rated vds rated id qg qgs qgd - - - 80 13 40 120 17 64 nsec turn on delay time rise time turn off delaytime fall time vdd =50% rated vds 50% rated id rg=6.2 w t d (on) tr t d (off) tf - - - - 20 35 65 40 27 66 100 60 v 1.47 v sd 1.4 - diode reverse recovery time reverse recovery charge 70 t rr q rr 150 - tj =25 o c if = 10 di/dt = 100a/ m sec input capacitance output capacitance reverse transfer capacitance vgs =0 volts vds =25 volts f =1 mhz ciss coss crss - - - 2600 700 260 2900 1100 275 pf nsec for thermal derating curves and other characteristic curves please contact ssdi marketing department. a on state drain current (vds > id(on) x rds(on) max, vgs = 10 v) - i d(on) - 75 diode forvard voltage (i s = rated i d , v gs = 0v, t j = 25 o c) nc na 250 1000 SFF75N06M sff75n06z 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 notes: 1/ maximum current limited by package, die rated at 75a. id=37.5a id=75a id=37.5a 13 15 19 - - -
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